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Download Perspectives, Science and Technologies for Novel Silicon on Insulator Devices (NATO Science Partnership Sub-Series: 3:) eBook

by Peter L.F. Hemment,Vladimir S. Lysenko,Alexei N. Nazarov

Download Perspectives, Science and Technologies for Novel Silicon on Insulator Devices (NATO Science Partnership Sub-Series: 3:) eBook
ISBN:
0792361164
Author:
Peter L.F. Hemment,Vladimir S. Lysenko,Alexei N. Nazarov
Category:
Engineering
Language:
English
Publisher:
Springer; 1 edition (December 31, 1999)
Pages:
368 pages
EPUB book:
1839 kb
FB2 book:
1651 kb
DJVU:
1686 kb
Other formats
mbr mobi lit txt
Rating:
4.8
Votes:
842


Nato Science Partnership Subseries: .

Perspectives, Science and Technologies for Novel Silicon on Insulator Devices. Nato Science Partnership Subseries: 3. Series Volume.

Электронная книга "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices", Peter . Hemment, Vladimir S. Lysenko, Alexei N. Nazarov. Эту книгу можно прочитать в Google Play Книгах на компьютере, а также на устройствах Android и iOS. Выделяйте текст, добавляйте закладки и делайте заметки, скачав книгу "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices" для чтения в офлайн-режиме.

Автор: Denis Flandre; Alexei N. Nazarov; Peter .

NATO SCIENCE PARTNERSHIP SUB-SERIES by John J. Kasianowicz - Mechanical properties of single molecules; - Detection & characterization of single polymers transported through narrow ion channels; - Direct.

Автор: Denis Flandre; Alexei Nazarov; Peter .

structures are an important material for modern microelectronic devices, in particular, for sensors of various physical values. As the electro-transport properties of such initially polycrystalline dispersed structures vary with the treatment of poly-silicon layer, this will determine, in particular, the device implementation of SOI at low temperatures. In this paper we report on extended AC and DC studies of low-temperature electrical conductivity of SOI-structures with initial boron concentrations in the vicinity to metal–insulator transition (. 1018 сm−3 and . 1018.

by Peter L. F. Hemment.

Electrical Instabilities in Structures and Devices During Voltage and Temperature Stressing. by Springer Science and Business Media LLC. in Perspectives, Science and Technologies for Novel Silicon on Insulator Devices

Electrical Instabilities in Structures and Devices During Voltage and Temperature Stressing. A. N. Nazarov, I. P. Barchuk, V. I. Kilchytska. Published: 1 January 2000. in Perspectives, Science and Technologies for Novel Silicon on Insulator Devices. Perspectives, Science and Technologies for Novel Silicon on Insulator Devices pp 179-186; doi:10. The publisher has not yet granted permission to display this abstract.

technology, Congresses. NATO ASI series - vol. 73. Genre.

Denis Flandre, Alexei N. Nazarov, Peter .

This concise volume contains the key papers presented during the International NATO Advanced Research Workshop on Silicon on Insulator device technologies. The authors have moved beyond reporting the current state of the technology to explore wider issues, from the economic aspects incorporating SOI and related materials into circuits and systems to consideration of low temperature electronics, quantum devices and MEMS. Readership: Postgraduate and professional engineers and researchers in the major silicon manufacturing companies, universities and research institutes.

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