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by Yannis P. Tsividis
Operation And Modellin. by Yannis P. Tsividis.
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The MOS (Metal Oxide Semiconductor) transistor is the most important building block .
The MOS (Metal Oxide Semiconductor) transistor is the most important building block of modern silicon integrated circuits. This book fills an important gap in the literature by presenting a unified treatment of the operation and modeling of the MOS transistor that is complemented with extensive intuitive discussions. The MOS transistor is the dominant VLSI (Very Large Scale Integration) device, and understanding of this device is mandatory for those people planning a career in device physics and modeling as well as. in circuit design.
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Yannis Tsividis is Charles Batchelor Professor of Electrical Engineering at Columbia University. Colin McAndrew became involved with modeling semiconductor devices in 1987 and has contributed to the development of models for MOS, bipolar, and passive devices
Yannis Tsividis is Charles Batchelor Professor of Electrical Engineering at Columbia University. His work with MOS transistors began in 1975 as part of his P. work at the University of California, Berkeley, in the context of the design and fabrication of the first fully-integrated MOS operational amplifier. He is a Fellow of IEEE. Colin McAndrew became involved with modeling semiconductor devices in 1987 and has contributed to the development of models for MOS, bipolar, and passive devices. He developed the -of-variation (BPV) technique for statistical modeling and has been a primary advocate of the use of Verilog-A and compilers for device modeling.
Yannis Tsividis Columbia University. New York Oxford OXFORD UNIVERSITY PRESS. This book provides a unified treatment of the many phenomena encountered in the operation of modern MOS transistors, and shows how such phenomena can be modeled analytically. The book is mainly written for use in a senior or first-year graduate course. It is felt that electrical engineering students have much to gain from a course devated to the subject.
Operation and Modeling of the MOS Transistor Close. 1 2 3 4 5. Want to Read. Are you sure you want to remove Operation and Modeling of the MOS Transistor from your list? Operation and Modeling of the MOS Transistor. Published June 21, 2003 by Oxford University Press, USA Mathematical models, Metal oxide semiconductors, Metal oxide semiconductor field-effect transistors. The discussion of MOS devices in this book will be based on an understanding of a few basic concepts.
Yannis Tsividis, Colin McAndrew. Operation and modeling of the metal oxide semiconductors transistor. 9780195170153 (hbk. : alk. paper)
Yannis Tsividis, Colin McAndrew. paper). 0195170156 (hbk. Acquired with support from. Gordon B. and Mary L. Crary Endowed Book Fund. Philip B. Gallagher Memorial Book Fund. Browse related items.
The author has also added a new chapter (10) on CAD models to take advantage of the widespread use of simulation software.
The text has also been enhanced by changing notation to standard units of measurement, introducing an "Overview of the MOS Transistor" in the first chapter, and increasing the number of examples. The author has also added a new chapter (10) on CAD models to take advantage of the widespread use of simulation software.
Operation and Modeling of the MOS Transistor, Y. Tsividis
Operation and Modeling of the MOS Transistor, Y. We propose and theoretically analyze a novel uctor tor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and agnet (HMF) contacts for the source and drain. When the magnetization configuration between the HMF source and drain is parallel (antiparallel), highly spin-polarized carriers injected from the HMF source to the channel are transported into (blocked by) the HMF drain, resulting in the uration-dependent output characteristics.